KIOXIA Europe GmbH has announced the completion of the fifth generation of a three-dimensional (3D) BiCS FLASH flash memory with a 112-ply vertical structure. KIOXIA plans to start shipping first workers
samples of a new 512 gigabyte (64 gigabyte) device created using TLC (triple-level cell, three bits per cell) technology in the first quarter of the 2020 calendar year.
However, the company warns in advance that prior to release, specifications may change, as not all features have been tested.
In the future, KIOXIA plans to apply the new fifth generation technology in higher capacity devices, 1 terabyte (128 gigabytes) using TLC and 1.33 terabytes using QLC
(Quadruple-level cell, four bits per cell).
According to the manufacturer, the 112-layer KIOXIA structure in combination with advanced schematics allows to obtain approximately 20% higher cell density compared to the 96-layer structure
the previous generation. Thus it was possible to reduce the cost of memory in terms of one bit and at the same time to increase the capacity of the produced memory based on one silicon wafer. Except
In addition, the speed of the interface increases by 50%, increases productivity during programming, reduces the delay in reading.
Since the announcement of the 3D Flash Memory prototype in 2007, KIOXIA has continued to develop the technology and is actively promoting BiCS FLASH. The fifth generation was developed in conjunction with technological and
production partner – Western Digital Corporation. Its production will be organized at the KIOXIA plant in Yokkaiti and at the newly built plant in Kitakami.