Yangtze Memory Reveals 128-layer 3D NAND QLC Performance

Yangtze Memory Reveals 128-layer 3D NAND QLC Performance


The announcement of China-developed 128-layer 3D NAND QLC flash memory on April 13 this year was a bolt from the blue. The Chinese manufacturer, which was not even on the project four years ago, announced preparations to produce the world’s most advanced non-volatile NAND memory. Mass production of the new memory will start in the fourth quarter of this year. It is argued that in terms of the totality of characteristics, there are no analogues of this memory in the world.

Today at the China Electronic Information Expo, Yangtze Memory (YMTC) revealed performance data for the 1.33Tbit 3D NAND QLC chip. It is stated that the speed of work on read and write operations in both cases reaches 1.6 Gb / s. The company hasn’t disclosed the chip configuration, but that doesn’t change the fact that development speeds appear to be among the best in the industry for 3D NAND memory.

In addition, of the industry-leading NAND memory known to date, the 128-layer 1.33-Tbit YMTC chip with four bits of data per cell (QLC) appears to be the world’s densest storage solution per unit area. …

Adding one and the other, one can believe that the Chinese developers managed, if not to surpass the world leaders in the development and production of 3D NAND, then at least to compete with them. At least in terms of technological excellence in product samples. But most importantly, the Chinese are rapidly entering the mass production of SSDs based on products developed in the country. And so far not hitting mass production, the 128-layer 1.33-Tbit 3D NAND QLC promises to start spreading as quickly as the 64-layer 3D NAND TLC, which began mass production less than a year ago.

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